Analysis of the effect of an electric-field profile on the gain-bandwidth product of avalanche photodetectors

摘要

We investigate the effect of the electric-field profile on the gain-bandwidth product of avalanche photodetectors with separate absorption and multiplication. We show that for a given multiplication layer thickness the electric-field profile plays an important role in determining the gain-bandwidth product. The calculation results show that an increasing triangular electric-field profile yields a larger gain-bandwidth product than most other profiles for Si/InGaAs avalanche photodetectors. (C) 1997 Optical Society of America.