We demonstrate high-speed all-optical switching via vertical excitation of an electron-hole plasma in anoxygen-ion implanted silicon-on-insulator microring resonator. Based on the plasma dispersion effect the spectral response of the device is rapidly modulated by photoinjection and subsequent recombination of charge carriers at artificially introduced fast recombination centers. At an implantation dose of 1 X 10~(12) cm~(-2) the carrier lifetime is reduced to 55 ps, which facilitates optical switching of signal light in the 1.55 (mu)m wavelength range at modulation speeds larger than 5 Gbits/s.
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机译：我们演示了通过垂直注入氧离子注入绝缘体上硅微环谐振器中的电子空穴等离子体的高速全光切换。基于等离子体弥散效应，器件的光谱响应可通过光注入以及随后在人工引入的快速重组中心进行载流子的重组而得到快速调节。在1 X 10〜（12）cm〜（-2）的注入剂量下，载流子寿命降低到55 ps，这有利于以大于5 Gbits的调制速度进行波长范围为1.55μm的信号光的光切换。 / s。
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