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A new method for measuring electro-optical coefficients of the optically active crystals

机译:一种测量旋光晶体电光系数的新方法

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A new method has been proposed to measure the electro-optical coefficients of the crystals which have optical activity. By using this method, the half-wave voltage and the electro-optical coefficients of the optically active crystals La3Ga5SiO14 (LGS), La3Ga5.5Nb0.5O14 (LGN), La3Ga5.5Ta0.5Si14 (LGT) have been determined. The resultants obtained are: gamma(11)(LGS) = 1.9 pm/V, gamma(11)(LGN) = 0.75 pm/V, gamma(11)(LGT) = 0.57 pm/V. This method can also be used to simulate the on-off state of the electro-optical Q switch in the laser cavity, whether the switch is made of the ordinary crystals or the optically active crystals. (C) 2004 Elsevier Ltd. All rights reserved.
机译:已经提出了一种新的方法来测量具有光学活性的晶体的电光系数。通过使用这种方法,已经确定了光学活性晶体La3Ga5SiO14(LGS),La3Ga5.5Nb0.5O14(LGN),La3Ga5.5Ta0.5Si14(LGT)的半波电压和电光系数。获得的结果为:γ(11)(LGS)= 1.9 pm / V,γ(11)(LGN)= 0.75 pm / V,γ(11)(LGT)= 0.57 pm / V。无论该开关是由普通晶体还是光学活性晶体制成,该方法也可用于模拟激光腔中电光Q开关的开关状态。 (C)2004 Elsevier Ltd.保留所有权利。

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