An improved method and experimental results of noise used as reliability estimation for semiconductor lasers

摘要

The low-frequency noise is a sensitive non-destructive indicator of semiconductor devices reliability. In this paper, the noises in InGaAsP/InGaAs/GaAlAs double quantum well semiconductor laser diodes (LDs) are measured, and the correlation between the noise and device reliability is studied. The insults indicate that the noise level in the LDs operating in low bias current is very important for estimating device reliability. So when noise is used as reliability indicator, the noise levels in LDs operating in both low and higher bias current should be considered, which improves the validity of reliability estimation. (C) 2003 Elsevier Science Ltd. All rights reserved. [References: 8]