Effect on polarization control in 850 nm vertical cavity surface emitting laser fabricated by H+ ion inclined implantation using tungsten wire as mask

摘要

Polarization character measurements on VCSEL devices, fabricated by ion inclined implantation with various parameters using tungsten wire as mask, were performed. The effect of polarization mode control was observed in these devices with square injected current aperture formed by distributed ion during implantation. Moreover, the effect depended oil the size of the square injected current aperture. The device with highest polarization mode suppression ratio (PMSR) up to 14 dB was obtained, which kept the operation of linear polarization state at 3.4I(th) injected current. The further optimization to obtain the better polarization control effect is available. What the most valuable is that the mechanism of polarization control effect is completely self-formed during device processing. Furthermore, this method is the simplest technique to apply in industry, as much as we know. (C) 2005 Elsevier B.V. All rights reserved.