Potential for size reduction of AlGaAs optical channel waveguide structures fabricated by focused ion beam implantation and oxidation

摘要

Optical channel waveguides formed by focused ion beam (FIB) implantation-induced mixing of AIGaAs multiple quantum well structures and subsequent oxidation of the mixed regions have the potential of significantly reducing the size of integrated photonic waveguide structures. Since FIB implantation is a direct write process characterized by nanoscale precision, we suggest its use for forming channel waveguides having nanoscale (submicrometer) widths. Calculations presented for such channel waveguides show reductions in size by at least an order of magnitude are possible for directional couplers and other structures involving curved channel waveguide sections. Such size reductions Would.allow the realization of significantly higher levels of device integration than are now currently possible.