The profiles of holographically exposed photoresist gratings are simulated according to the state of the an obtained in microlithography. The accuracy of the simulation depends on the accuracy of the development rote R of the photoresist, which is a function of the normalised unexposed photoactive compound concentration or inhibitor concentration M after exposure. It is shown that this development rate R has to be fine tuned by using experimentally Obtained photoresist profiles in order to obtain the required accuracy. With fine tuned development rate, a very good agreement between theory and experiment can be obtained in the case of holographically exposed photoresist gratings with periods in the range of 1 μm. The properties of the photoresist, of the development and of the optical set-up which are necessary for sinusoidal photoresist profiles are also discussed.
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