IPL Resistless Lithography as a Method for Delta-Doping of Monocrystalline Semiconductors by Al and Sb Implantation

摘要

The potential is assessed of ion projection lithography (IPL) as a method for Al and Sb implantation delta-doping of silicon single crystals in order to produce prescribed arrangements of quantum dots and wires. Conceptually, the method uses an ion beam to project a stencil mask on a plane beneath the surface of a wafer, thus creating a desired doping profile. It is shown that IPL implanters with immersion electrostatic objectives could provide a lateral resolution of about 35 nm on a subfield area of 0.06 × 0.06 mm{sup}2. This resolution should allow one to produce 10{sup}6 qubits on a chip area of 0.35 × 0.35 mm{sup}2. It also implies a throughput of 60 quantum chips per hour, which appears to be sufficient to produce quantum computers on a commercial basis.