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首页> 外文期刊>Russian Microelectronics >Noise Immunity of a 28-nm Two-Phase CMOS Combinational Logic to Transient Effects of Single Nuclear Particles
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Noise Immunity of a 28-nm Two-Phase CMOS Combinational Logic to Transient Effects of Single Nuclear Particles

机译:28 nm两相CMOS组合逻辑对单核粒子瞬态效应的抗扰性

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The noise immunity of a 28-nm CMOS combinational logic (by the example of a two-phase inverter) to the effect of single nuclear particles is substantially higher if the constructive capacity between the outputs of a two-phase inverter is substantially lower than the threshold value. In this case, weakened noise enters the next two-phase element. It does not vary its logic state but transfers it into a locked state for the noise duration. The threshold value of capacity is larger for the CMOS two-phase inverters with symmetric switching characteristics upon switching both from 1 to 0 and from 0 to 1. The threshold critical characteristic makes it possible to compare the CMOS two-phase elements fulfilled according to different design rules and evaluate the gain of the two-phase logics under the effect of single particles on one of differential nodes. Critical charges of the two-phase elements substantially exceed (by a factor of at least 20 by the example of inverters) the critical charges of the CMOS traditional logic.
机译:如果两相逆变器的输出之间的相乘能力大大低于28nm CMOS组合逻辑(以两相逆变器为例)对单核粒子的影响,则其抗噪能力将大大提高。阈值。在这种情况下,减弱的噪声会进入下一个两相元件。它不会改变其逻辑状态,而是会在噪声持续时间内将其转换为锁定状态。对于具有对称切换特性的CMOS两相逆变器,从1切换到0以及从0切换到1时,电容的阈值都较大。阈值临界特性使得可以比较根据不同实现的CMOS两相元件设计规则并评估在差分节点之一上的单个粒子影响下的两相逻辑增益。两相元件的临界电荷基本上超过了CMOS传统逻辑的临界电荷(以反相器为例,至少为20倍)。

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