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首页> 外文期刊>Russian Journal of General Chemistry >Synthesis and Electrophysical Characteristics of VO2-Based Nanostructures with a Complicated Architecture on a Silicon Surface
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Synthesis and Electrophysical Characteristics of VO2-Based Nanostructures with a Complicated Architecture on a Silicon Surface

机译:在硅表面上具有复杂结构的基于VO2的纳米结构的合成和电物理特性

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摘要

Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130-160 and 100-110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO2 affects the phase transition characteristics.
机译:通过分子分层法合成了基于VO2的复杂结构的含铬纳米膜。对二氧化钒纳米微晶和含VO2的铬的电物理特性的研究表明,半导体-金属相变分别出现在130-160和100-110 K的范围内。在基于VO2的纳米结构中引入过渡元素离子会影响相变特性。

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