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首页> 外文期刊>RSC Advances >Towards near-infrared photosensitization of tungsten trioxide nanostructured films by upconverting nanoparticles
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Towards near-infrared photosensitization of tungsten trioxide nanostructured films by upconverting nanoparticles

机译:通过上转换纳米粒子实现三氧化钨纳米薄膜的近红外光敏化

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摘要

Upconverting materials are currently explored in the field of solar energy conversion in order to extend the light harvesting properties of semiconductors to the near-infrared (NIR) region, their absorption being generally limited to the visible region of the solar spectrum. Here, we propose to photosensitize nanostructured films of tungsten oxide (WO3), a semiconductor widely investigated in photoelectrochemistry, photocatalysis and electrochromics, with NaGdF4:Er3+, Yb3+ upconverting nanoparticles (UCNPs). In order to do so, we fabricate nanocomposite films of WO3 and NaGdF4: Er3+, Yb3+ UCNPs (indicated as UCNP/WO3 films). Current-time measurements show that, under irradiation at lambda = 980 nm, a relative increase in current of about 3% with respect to the dark current is observed in the UCNP/WO3 films. The UCNP/WO3 mol% ratio and the temperature of the thermal treatment of the nanocomposite films are both critical to simultaneously achieve photosensitization and charge carrier transport in the UCNP/WO3 films.
机译:当前在太阳能转换领域中探索上转换材料,以将半导体的光收集特性扩展到近红外(NIR)区域,其吸收通常限于太阳光谱的可见光区域。在这里,我们建议使用NaGdF4:Er3 +,Yb3 +上转换纳米粒子(UCNPs)对光化,光催化和电致变色领域中广泛研究的半导体氧化钨(WO3)的纳米结构薄膜进行光敏化。为此,我们制造了WO3和NaGdF4的纳米复合膜:Er3 +,Yb3 + UCNP(表示为UCNP / WO3膜)。电流时间测量表明,在λ= 980 nm的辐射下,在UCNP / WO3薄膜中观察到相对于暗电流,电流相对增加了约3%。纳米复合膜的UCNP / WO3摩尔%比和热处理温度对于同时实现UCNP / WO3膜中的光敏化和电荷载流子传输都是至关重要的。

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