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Specific features of electronic structures and optical susceptibilities of molybdenum oxide

机译:氧化钼的电子结构和光学磁化率的特定特征

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Orthorhombic molybdenum trioxide, alpha-MoO3, is comprehensively investigated using density function theory based on the all-electron full potential linear augmented plane wave (FPLAPW) method as implemented in the WIEN2k code within four types of exchange correlation potentials, namely, the local density approximation (CA-LDA), generalized gradient approximation (PBE-GGA), Engel-Vosko generalized gradient approximation (EVGGA) and the modified Becke-Johnson potential (mBJ). The conduction band minimum (CBM) is situated at Gamma point of Brillouin zone (BZ), whereas the valence band maximum (VBM) is located at T point of BZ. Calculation demonstrated that alpha-MoO3 is an indirect band gap insulator. The calculated electronic band structure and the total density of states confirm that mBJ brings the calculated energy band gap (2.81 eV) closer to the experimental one (3.03, 3.10 eV). The electronic space charge density distribution of alpha-MoO3 is explored in two crystallographic planes, namely, (0 0 1) and (1 0 1), to scrutinize the origin of chemical bonds. It is found that the majority of the charges are accumulated on the O site and the distribution of electronic charge is spherical. The optical properties are calculated for three tensor components along the polarization directions [1 0 0], [0 1 0] and [0 0 1] with respect to the crystalline axes. It is found that the regions confined between 6.5 and 8.0 eV and 10.0 and 13.5 eV are considered as lossless regions. The calculated optical properties support our observation from the calculated electronic band structure and the density of states, which shows that LDA, GGA and EVGGA underestimate the energy band gap, while mBJ succeeds by a large amount in bringing the calculated energy band gap closer to the experimental one.
机译:使用基于全电子全势线性增强平面波(FPLAPW)方法的密度函数理论对斜方晶系三氧化钼α-MoO3进行了全面研究,该方法在WIEN2k代码中在四种类型的交换相关势能即局部密度中实现近似(CA-LDA),广义梯度近似(PBE-GGA),Engel-Vosko广义梯度近似(EVGGA)和修正的Becke-Johnson势(mBJ)。导带最小值(CBM)位于布里渊区(BZ)的伽玛点,而价带最大值(VBM)位于BZ的T点。计算表明,α-MoO3是一种间接的带隙绝缘体。计算出的电子能带结构和状态的总密度证实,mBJ使计算出的能带隙(2.81 eV)接近实验值(3.03,3.10 eV)。在两个晶体学平面(0 0 1)和(1 0 1)中探索了α-MoO3的电子空间电荷密度分布,以检查化学键的起源。发现大部分电荷聚集在O位上,并且电子电荷的分布是球形的。对于三个张量分量,沿着相对于晶轴的偏振方向[1 0 0],[0 1 0]和[0 0 1]计算光学特性。发现限制在6.5和8.0eV之间以及10.0和13.5eV之间的区域被认为是无损区域。计算出的光学性质支持我们从计算出的电子能带结构和态密度观察到的结果,这表明LDA,GGA和EVGGA低估了能带隙,而mBJ在很大程度上使计算出的能带隙更接近于能带隙。实验性的。

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