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An evaluation of radial track etch rate in LR-115 detectors exposed to Fe ions by means of FT-IR spectrometry

机译:FT-IR光谱法评估暴露于Fe离子的LR-115检测器中的径向轨迹蚀刻速率

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Chemical modification of LR-115 induced by the irradiation of gamma-ray and 147 MeV Fe ions has been observed. Density of O-NO2 and C-O-C bonds in the sheets was decreased. We also confirmed the modification by chemical etching during early stage in LR-115 exposed to Fe ions. The absorption band around 1740cm(-1) was reduced rapidly, which can be attributable to C=O bonds of some additives contained in LR-115. We have derived the radial track etch rate from the reduction of the absorbance,
机译:已经观察到由γ射线和147 MeV Fe离子的照射引起的LR-115的化学修饰。片中O-NO 2和C-O-C键的密度降低。我们还证实了在暴露于铁离子的LR-115早期通过化学蚀刻进行的改性。 1740cm(-1)附近的吸收带迅速减小,这可能归因于LR-115中包含的某些添加剂的C = O键。我们从吸收率的降低中得出了径向轨迹蚀刻速率,

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