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Dose-rate effects on the bulk etch-rate of CR-39 track detector exposed to low-let radiations

机译:剂量率对暴露于低辐射辐射下的CR-39轨迹检测器整体蚀刻速率的影响

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The effect of gammna-rays and pulsed electrons has been investigated on the bulk etch rate of CR-39 detector at doses up to 100 kGy under various dose-rate between 0.0044 and 35.0 Gy/s. The bulk etch rate increased exponentially with the dose at every examined dose-rates. It was reveled to be strongly depend on the dose-rate: the bulk etch rate was decreased with increasing dose-rate at the same total dose. A primitive model was proposed to explain the dose-rate effect in which oxygen dissolved Was assumed to dominate the damage formation process. [References: 13]
机译:在0.0044至35.0 Gy / s的各种剂量率下,对剂量高达100 kGy的CR-39检测器的整体蚀刻速率,研究了伽玛射线和脉冲电子的影响。在每个检查的剂量率下,整体腐蚀速率均随剂量呈指数增加。揭示出它很大程度上取决于剂量率:在相同的总剂量下,整体蚀刻率随着剂量率的增加而降低。提出了一个原始模型来解释剂量率效应,在该剂量率效应中,假设溶解氧占主导地位。 [参考:13]

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