Effects of annealing on the luminescent properties from defects formed in electron-irradiated GaN

摘要

The effects of annealing on the luminescence properties of electron-irradiated GaN were investigated by photoluminescence (PL), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Our results indicate that the yellow luminescence (YL) remains disappear after all annealing treatments and shows a non-linear dependence on the annealing temperature up to 800 °C. The annealing process can be divided into two main stages associated with irradiation defects. At annealing temperatures up to 600 °C, the behavior of YL can be attributed to the net effects of V _(Ga)O _N complex formation caused by the migration of gallium vacancies (V _(Ga)) and V _(Ga)O _N complex dissociation due to the disappearance of gallium vacancies. At annealing temperatures approaching 800 °C, the incorporation of carbon into the group-V sublattice becomes the dominant factor in the appearance of YL. In addition, experimental results of PL and SEM show that a small proportion of irradiation damage still exists in GaN after annealing at 800 °C.