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首页> 外文期刊>Radiophysics and quantum electronics >Development of Waveguide Semiconductor Switches of Microwave Radiation in the 70-and 260-ghz Ranges
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Development of Waveguide Semiconductor Switches of Microwave Radiation in the 70-and 260-ghz Ranges

机译:70-260 GHz范围内的微波辐射波导半导体开关的开发

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摘要

We have developed, manufactured, and studied experimentally prototypes of microwave switches operated in the 70- and 260-GHz frequency ranges and controlled by pulses of optical laser radiation. The results of their numerical simulation by the finite-difference time-domain (FDTD) method are presented, along with the design parameters of the prototypes. The switch speed is equal to 1 ns, and the microwave tuning frequency range amounts to about 10%. The process of switching with the use of a low-cost semiconductor optical laser (with a wavelength of 532 nm and a continuous-wave power of 200 MW) is demonstrated experimentally at a switched-radiation frequency of 266.68 GHz.
机译:我们已经开发,制造和研究了在70 GHz和260 GHz频率范围内工作并受光学激光辐射脉冲控制的微波开关的原型。给出了通过时域有限差分法(FDTD)进行数值模拟的结果,以及原型的设计参数。开关速度等于1 ns,微波调谐频率范围约为10%。实验证明了在开关辐射频率为266.68 GHz的情况下使用低成本半导体光学激光器(波长为532 nm,连续波功率为200 MW)进行切换的过程。

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