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首页> 外文期刊>Cellular oncology >Phenotypic changes in mitochondrial membrane potential (Delta psi(m)) during valinomycin-induced depolarisation and apoptosis.
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Phenotypic changes in mitochondrial membrane potential (Delta psi(m)) during valinomycin-induced depolarisation and apoptosis.

机译:缬氨霉素诱导的去极化和凋亡过程中线粒体膜电位(Δpsi(m))的表型变化。

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A large body of evidence has implicated mitochondria in control of cell death, where key apoptotic mechanisms involve change in mitochondrial membrane permeability and depolarisation of mitochondrial membrane potential (Delta psi(m)). Assessment of Delta psi(m) is traditionally conducted using the lipophilic cation JC-1 on the flow cytometer or by fluorescent microscopy. Here we assess JC-1 aggregation using the novel tool of digital texture analysis to establish mitochondrial phenotypic changes induced by the K+ ionophore, valinomycin in a unique model comprising SW480 and SW620 cell lines. This provides an opportunity to study these phenomena in the context of colorectal cancer. Valinomycin-induced apoptosis was detected using morphology and analysis of DNA content. Cells were treated with valinomycin, images digitally recorded on a calibrated video photometer and subjected to high resolution digital texture analysis. This demonstrated that the HARAM texture features (Mean of the Haralick texture features) were highly valuable in describing the transition of Delta psi(m) as the cell undergoes apoptosis. In conclusion this study illustrates the potential of texture analysis as a novel and additional technique for quantifying JC-1 aggregation and revealing the spectrum of collapse of Delta psi(m) during apoptosis.
机译:大量证据表明线粒体可控制细胞死亡,其中关键的凋亡机制涉及线粒体膜通透性的变化和线粒体膜电位的去极化(Δpsi(m))。传统上,使用流式细胞仪上的亲脂性阳离子JC-1或通过荧光显微镜对Delta psi(m)进行评估。在这里,我们使用数字纹理分析新工具评估JC-1聚集,以建立由SW +和SW620细胞系组成的独特模型中由K +离子载体,缬霉素引起的线粒体表型变化。这提供了在大肠癌的背景下研究这些现象的机会。使用形态学和DNA含量分析检测了缬霉素诱导的细胞凋亡。用缬氨霉素处理细胞,将图像数字记录在校准的视频光度计上,并进行高分辨率数字纹理分析。这表明,HARAM纹理特征(Haralick纹理特征的平均值)在描述细胞凋亡时的Delta psi(m)跃迁方面非常有价值。总而言之,这项研究说明了质地分析作为定量JC-1聚集并揭示细胞凋亡过程中Δpsi(m)塌陷谱的一种新的附加技术的潜力。

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