A THEORETICAL ANALYSIS OF THE FORMATION OF NONSTOICHIOMETRIC POINT DEFECTS IN SiC SINGLE CRYSTALS GROWN UNDER EQUILIBRIUM CONDITIONS AT DIFFERENT PARTIAL PRESSURES OF SILICON VAPOR

摘要

Formation of Schottky and Frenkel vacancy-type point defects in silicon carbide single crystals is analyzed. Relevant equations for numerical analysis are derived and a method for their solution is proposed. The partial pressure of silicon vapor over the growing crystal is shown to play a role in the formation of defects in SiC single crystals.