Negative magnetoresistance of InSb whiskers with different impurity concentrations 4.4 x 10(16)-7.16 x 10(17) cm(-3) was studied in longitudinal magnetic field 0-14 T in the temperature range 4.2-77 K. The negative magnetoresistance reaches about 50% for InSb whiskers with impurity concentration in the vicinity to the metal-insulator transition. The negative magnetoresistance decreases to 35 and 25% for crystals with Sn concentration from the metal and dielectric side of the transition. The longitudinal magnetoresistance twice crosses the axis of the magnetic field induction for the lightly doped crystals. The behavior of the negative magnetoresistance could be explained by the existence of classical size effect, in particular boundary scattering in the subsurface whisker layer. Published by AIP Publishing.
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机译：在温度4.2-77 K的纵向磁场0-14 T中研究了不同杂质浓度的InSb晶须的负磁阻4.4 x 10（16）-7.16 x 10（17）cm（-3）。负磁阻达到对于InSb晶须，杂质浓度在金属-绝缘体过渡区附近约为50％。从过渡金属和电介质一侧起，具有Sn浓度的晶体的负磁阻降低至35％和25％。纵向磁阻两次穿过轻掺杂晶体的磁场感应轴。负磁阻的行为可以通过经典尺寸效应的存在来解释，特别是地下晶须层中的边界散射。由AIP Publishing发布。
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