80-GHz AlGaInAs/InP 1.55μm colliding-pulse mode-locked laser with low divergence angle and timing jitter

摘要

We present an 80-GHz λ～1.55 μm passively colliding-pulse mode-locked laser based on a novel Al-GaInAs/InP epitaxial structure, which consists of a strained 3- quantum-well active layer incorporated with a passive far-field reduction layer. The device generated 910 fs pulses with a state-of-art timing jitter value of 190 fs (4 - 80 MHz), while demonstrating a low divergence angle (12.7°×26.3°) with two fold butt coupling efficiency to a flat cleaved single mode fiber when compared with the conventional mode-locked laser.