Hydrogenic impurity in two-dimensional semiconductors with anisotropic energy spectrum of carriers

摘要

The binding energy and wave function of a ground state of a shallow hydrogenic impurity in two-dimensional semiconductors with isotropic and anisotropie effective mass of carriers m{sup}* = {m{sup}⊥, m{sup}⊥, m{sup}‖} are derived. The calculations are performed by the variational method based on a two-parametric trial wave function. The dependence of binding energy and deformation of an impurity on 2D layer thickness and effective mass anisotropy parameter m{sup}⊥/m{sup}‖ is investigated. The obtained results are in a good agreement with experimental data and in the limiting cases coincide with the theoretical calculations of shallow impurity binding energy for bulk semiconductors [1] and two-dimensional semiconductors with isotropic effective mass of electrons [2].