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Terahertz imaging achieved with low-cost CMOS detectors

机译:使用低成本CMOS检测器实现太赫兹成像

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摘要

Subwavelength antennas in the metal interconnection layer of an inexpensive CMOS chip couple terahertz radiation to the chip's electronics, enabling the creation of inexpensive, compact imagers. The electromagnetic spectrum has historically been exploited using one of two kinds of technologies: optics for shorter wavelengths, and radiofrequency and electronics for longer ones. The terahertz region, which is situated between the optical and the electronic domains, has until recently remained mostly inaccessible due to the lack of practical sources and detectors (see Fig. 1). Today's strong interest in the terahertz region is motivated by the specific characteristics of terahertz radiation. The energy of a terahertz photon ranges around 4 meV, a value corresponding to vibrations of some heavy complex molecules, including explosives. Such low photon energies make terahertz radiation nonionizing; it is therefore considered to be safe in terms of health concerns.
机译:廉价CMOS芯片的金属互连层中的亚波长天线将太赫兹辐射耦合到该芯片的电子设备,从而能够创建廉价,紧凑的成像器。历史上,电磁光谱是使用两种技术之一开发的:用于较短波长的光学器件,以及用于较长波长的射频和电子器件。由于缺乏实用的信号源和检测器,位于光学和电子域之间的太赫兹区域直到最近仍几乎无法访问(见图1)。太赫兹辐射的特定特征激发了当今对太赫兹地区的浓厚兴趣。太赫兹光子的能量范围约为4 meV,该值对应于一些重的复杂分子(包括炸药)的振动。如此低的光子能量使太赫兹辐射非电离。因此,从健康角度考虑,它是安全的。

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