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SINGLE-PHOTON DETECTORS: Planar architecture optimizes Si single-photon-counting detectors

机译:单光探测器:平面架构优化了Si单光子计数探测器

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摘要

A new planar structure for silicon single-photon-counting detectors leads to the doubling of detector efficiency while maintaining picosecond timing resolution, low dark counts, and low power consumption. In the April 2005 issue of Laser Focus World, OptoElectronic Components (OEC) and colleagues presented developments from Micro Photon Devices (MPD; Bolzano, Italy) on a complementary metal-oxide semiconductor (CMOS)-compatible single-photon-counting detector based on a custom planar process. This type of detector offered picosecond timing resolution and low power consumption, making it very robust and well-suited for applications requiring fast timing resolution. However, when compared to the photon-counting detectors that use high-resistivity "thick" silicon and a dedicated process, planar photon-counting detectors have lower detection efficiency, especially in the near-infrared region.
机译:硅单光子计数检测器的新平面结构导致检测器效率加倍,同时保持了皮秒级的定时分辨率,低暗计数和低功耗。在2005年4月出版的《激光聚焦世界》上,光电组件(OEC)及其同事介绍了微光子器件公司(MPD;意大利博尔扎诺)在兼容互补型金属氧化物半导体(CMOS)的单光子计数探测器上的发展。定制平面工艺。这种类型的检测器提供皮秒级的定时分辨率和低功耗,使其非常坚固,非常适合需要快速定时分辨率的应用。但是,与使用高电阻率“厚”硅和专用工艺的光子计数检测器相比,平面光子计数检测器的检测效率较低,尤其是在近红外区域。

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