Effects of Doping Concentration on Al-doped ZnO Thin Films Prepared by Pulsed Laser Deposition (PLD)

摘要

Al-doped zinc oxide (AZO) thin films have been prepared by pulsed laser deposition (PLD). The structural, electrical and optical properties of these films were investigated as a function of Al-doping amount (0 to 7 wt%) in the target. Films were deposited at a low substrate temperature of 100℃ under 10 Pa of oxygen pressure. It was observed that 3wt% of Al is the optimum doping amount in the target to achieve the minimum film resistivity.