Compact mole fraction-dependent modeling of I-V and C-V characteristics in AlxGa1-xN/GaN HEMTs

摘要

In this paper we present a compact mole fraction-dependent modeling of the I-V and C-V characteristics in AlxGa1-xN/GaN HEMTs using Atlas TCAD. The C-V characteristics of the AlxGa(1-x)N/GaN HEMTs are obtained using a charge conserving model. Based on this modeling, we have developed an analytical model for the threshold voltage, the carrier sheet density, the drain current, and the capacitance. The model covers all the different operating regimes of the device. The model includes the Al mole fraction of the barrier layer effects and was incorporated into our previously developed charge based on I-V and C-V characteristics, and we also simulated the device transconductance of AlxGa1-xN/GaN HEMTs. The results of the modeled I-V and C-V characteristics are in excellent agreement with the simulated data obtained by the Atlas TCAD simulator, which demonstrates the validity of the proposed model.