...
机译:
Yonsei Univ, Dept Ceram Engn, 134 Sinchon Dong, Seoul 120749, South Korea.;
机译:On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/nhyphen;GaAs contacts
机译:Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes
机译:General interfacial layer expression for the equilibrium Schottky barrier height and its application to annealed Auhyphen;GaAs contacts
机译:AU / N-GaAs Schottky屏障二极管的电气特性增强使用GaAs表面的硫钝化(NH4)2SX硫化技术
机译:基于GaAs MMIC中双热流路径的n + GaAs / AuGeNi-Au热电偶型RF MEMS功率传感器
机译:原子层沉积HFO2薄膜界面层对Au / Ti / N-Ga-GaAs Schottky二极管电性能的影响
机译:影响de En'Inrichissement superficiel en arsenic sur l'Ohmicite du Contact n-Gaas:In / au(砷表面富集对n-Gaas欧姆的影响:In / au接触)