Cavity-enhanced photoluminescence of SiGe/Si multiquantum wells grown on silicon-on-insulator substrate

摘要

Sharp and strong room-temperature photoluminescence (PL) of the Si_(0.59)Ge_(0.41)/Si multiquantum wells grown on the silicon-on-insulator substrate is investigated. The cavity formed by the mirrors at the surface and the buried SiO_(2) interface enhances the PL emission and has a wavelength-selective effect on the luminescence. The peak position is consistent with the simulation result and independent of the exciting power, which indicates a strong cavity effect on the room-temperature PL.