Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

摘要

The tensile strained Ge/SiGe multiple quantum wells (MQWs) grown on a silicon-on-insulator (SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO_2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum (FWHM) is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity light emitting devices.