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Theoretical investigation on electronic, optical, and charge transport properties of 7,8,15, 16-tetraazaterrylene and its derivatives with electron-attracting substituents

机译:7、8、15、16-四氮杂萘嵌苯及其具有吸引电子取代基的衍生物的电子,光学和电荷输运性质的理论研究

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Electronic, optical, and charge transport properties of 7,8,15,16-tetraazaterrylene (TAT) and its three tetrasubstituted derivatives with the electron-attracting substituent have been studied theoretically using density functional theory (DFT) calculations coupled with the incoherent charge-hopping model. The calculated results reveal that the introduction of electron-attracting substituents, which does not break down the planar skeleton of TAT core, can stabilize the extended π-system and then improve the electron injection efficiency as well as the ambient stability. Based on TAT single-crystal structure, the predicted 3D-average electron mobility reaches as high as 3.404 × 10~(-2) cm~2 V~(-1) s~(-1) at 300 K, but the hole mobility is only 6.516 × 10~(-4) cm~2 V~(-1) s~(-1), which indicates that TAT single crystal may be a promising candidate as n-channel materials. The simulation of the angle-resolved electron mobility shows that TAT single-crystal possesses a remarkably anisotropic electron-conducting behaviour, and the maximum electron mobility is found to be along the crystallographic a-axis direction. In addition, the calculated reorganization energies and electronic coupling values show that the three TAT derivates (4F-TAT, 4CI-TAT, and 4CN-TAT) designed in this work may well be potential n-channel materials with the high electron mobility. TD-DFT B3LYP/ 6-311G(d,p) calculations reveal the most relevant electronic transitions for the studied compounds present the π → π~* character and the strongest absorption and emission peaks are dominated by the transitions of HOMO → LUMO. The introduction of electron-withdrawing substituents red-shifts the maximal absorption and emission wavelengths.
机译:使用密度泛函理论(DFT)计算并结合非相干电荷理论研究了7,8,15,16-四氮杂三甲苯(TAT)及其三个具有电子吸引取代基的四取代衍生物的电子,光学和电荷传输性质。跳跃模型。计算结果表明,引入电子吸引性取代基不会破坏TAT核的平面骨架,可以稳定扩展的π系统,进而提高电子注入效率以及环境稳定性。基于TAT单晶结构,在300 K下,预测的3D平均电子迁移率高达3.404×10〜(-2)cm〜2 V〜(-1)s〜(-1),但空穴迁移率高TAT单晶仅为6.516×10〜(-4)cm〜2 V〜(-1)s〜(-1),表明TAT单晶可能是有前途的候选材料。角分辨电子迁移率的模拟表明,TAT单晶具有显着的各向异性电子传导行为,并且发现最大电子迁移率沿晶体学a轴方向。此外,计算的重组能和电子耦合值表明,在这项工作中设计的三种TAT衍生物(4F-TAT,4CI-TAT和4CN-TAT)很可能是具有高电子迁移率的潜在n沟道材料。 TD-DFT B3LYP / 6-311G(d,p)的计算表明,所研究化合物的最相关电子跃迁具有π→π〜*特征,而最强的吸收和发射峰由HOMO→LUMO的跃迁主导。吸电子取代基的引入使最大吸收和发射波长发生红移。

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