首页> 外文期刊>Monatshefte fur Chemie >Transition metal silyl complexes LVI. (CO)(4)Fe(H)SiR3 and [(CO)(4)FeSiR3](-) - A density functional study on the influence of the substituents at silicon on the electronic properties of the metal center
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Transition metal silyl complexes LVI. (CO)(4)Fe(H)SiR3 and [(CO)(4)FeSiR3](-) - A density functional study on the influence of the substituents at silicon on the electronic properties of the metal center

机译:过渡金属甲硅烷基络合物LVI。 (CO)(4)Fe(H)SiR3和[(CO)(4)FeSiR3](-)-硅上取代基对金属中心电子性能影响的密度泛函研究

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The effect of the substitution pattern at the silyl ligand in complexes of the type (CO)(4)Fe(H)SiR3 and the corresponding anions [(CO)(4)FeSiR3](-) was investigated by a density functional study. Upon successive substitution of R = H for R = Cl, a contraction of the Fe-Si bond takes place in both types of complexes. The effect of the substitution is much larger in the anionic complexes which is explained by a higher degree of back bonding from the metal center to the SiR3 ligand. The optimized structures of the complexes are in good agreement with related experimental ones. The changes in electron density at the metal center are also reflected in calculated vibrational frequencies of the CO ligands and the proton affinities of the anionic complexes. An increasing electron withdrawal by the silyl ligand lowers the proton affinity. [References: 31]
机译:通过密度泛函研究研究了(CO)(4)Fe(H)SiR3型与相应阴离子[(CO)(4)FeSiR3](-)的配合物中甲硅烷基配体上取代模式的影响。在用R = H连续取代R = Cl时,两种复合物中都会发生Fe-Si键的收缩。取代的作用在阴离子络合物中要大得多,这可以通过从金属中心到SiR3配体的更高程度的反向键合来解释。配合物的优化结构与相关实验吻合良好。金属中心电子密度的变化也反映在计算出的CO配体的振动频率和阴离子配合物的质子亲和力上。甲硅烷基配体增加的电子吸收降低了质子亲和力。 [参考:31]

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