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A genome-wide regulatory network identifies key transcription factors for memory CD8(+) T-cell development

机译:全基因组调控网络可识别记忆CD8(+)T细胞发育的关键转录因子

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Memory CD8(+) T-cell development is defined by the expression of a specific set of memory signature genes. Despite recent progress, many components of the transcriptional control of memory CD8(+) T-cell development are still unknown. To identify transcription factors and their interactions in memory CD8(+) T-cell development, we construct a genome-wide regulatory network and apply it to identify key transcription factors that regulate memory signature genes. Most of the known transcription factors having a role in memory CD8(+) T-cell development are rediscovered and about a dozen new ones are also identified. Sox4, Bhlhe40, Bach2 and Runx2 are experimentally verified, and Bach2 is further shown to promote both development and recall proliferation of memory CD8(+) T cells through Prdm1 and Id3. Gene perturbation study identifies the interactions between the transcription factors, with Sox4 positioned as a hub. The identified transcription factors and insights into their interactions should facilitate further dissection of molecular mechanisms underlying memory CD8(+) T-cell development.
机译:记忆CD8(+)T细胞发育是由一组特定的记忆特征基因的表达定义的。尽管有最新进展,记忆CD8(+)T细胞发育的转录控制的许多组件仍然未知。为了识别转录因子及其在记忆CD8(+)T细胞发育中的相互作用,我们构建了一个全基因组的调控网络,并将其应用于识别调控记忆特征基因的关键转录因子。重新发现了大多数在记忆CD8(+)T细胞发育中起作用的已知转录因子,并且还鉴定了大约12个新的转录因子。 Sox4,Bhlhe40,Bach2和Runx2已通过实验验证,并且Bach2进一步显示可通过Prdm1和Id3促进发育和回忆记忆CD8(+)T细胞的增殖。基因扰动研究确定了转录因子之间的相互作用,其中Sox4被定位为枢纽。确定的转录因子及其相互作用的见解应有助于进一步解剖记忆CD8(+)T细胞发育的分子机制。

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