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Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

机译:二维半导体过渡金属二卤化物的光子学和光电子学

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Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichal-cogenides, MX2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin-and valley-dependent properties.
机译:范德华键合固体原子薄层开发的最新进展为探索2D物理以及应用材料开辟了新的可能性。其中,与石墨烯的零能带隙相反,半导体过渡金属二硫化氢化合物MX2(M = Mo,W; X = S,Se)在近红外到可见光区域具有带隙。在单层极限中,已证明这些材料具有直接带隙,这一特性非常适合光子学和光电子学应用。在这里,我们回顾了2D半导体过渡金属二卤化物的电子和光学性质以及最新的应用进展,重点是强激子效应以及与自旋和谷相关的性质。

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