The Electronic Transport Properties in Boron-Doped Armchair Graphene Nanoribbon Junctions

摘要

An electronic component using individual molecules is one of the ultimate goals in nanotechnology. In this work, by performing non-equilibrium Green's functions in combination with density-functions theory, the transport properties of armchair graphene nanoribbon (AGNR) devices are investigated, in which one lead is undoped AGNRs and the other is Boron (B)-doped AGNRs. The current voltage (I V) characteristic of B-doped AGNRs devices depends on their width and exhibits three distinct family (3n, 3n +1, 3n +2) behaviors. It was found that the 3n+2 system exhibits a metallic property and 3n and 3n +1 systems exhibit semi conductive property. Moreover, it shows rectifying behavior for W7 system.