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首页> 外文期刊>Nanoscience and Nanotechnology Letters >The Nanoindentation-Induced Cracking of Thin Silicon Chips
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The Nanoindentation-Induced Cracking of Thin Silicon Chips

机译:纳米压痕诱导的薄硅芯片开裂

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The nanoindentation-induced cracking of silicon chip of finite thickness under the Berkovich indenter is simulated by the plastic-damage model to study the effect of chip thickness on the cracking behaviors. An instability for the growth of crack is observed due to the transition from the radial crack to the through-thickness crack, and both the load at radial crack initiation and the critical load at which the instability occurs decrease with the reduction of chip thickness. The dependence of the crack length (c) on the maximum load (P) is found to follow the classic relation of c~(3/2) (propor. to) P for the radial crack, but this relation breaks down for the through-thickness crack, and turns to a linear relation: c (propor. to) P. The expressions for the dependences of critical load and critical crack length on the thickness are obtained by fracture mechanics analysis, and are in good agreement with the current finite element simulations.
机译:通过塑性损伤模型模拟了纳米压痕在Berkovich压头下诱导的有限厚度硅芯片的开裂,以研究芯片厚度对开裂行为的影响。由于从径向裂纹到全厚度裂纹的过渡,观察到裂纹扩展的不稳定性,并且随着切屑厚度的减小,径向裂纹开始时的载荷和发生不稳定性的临界载荷均减小。发现裂纹长度(c)对最大载荷(P)的依赖性遵循径向裂纹的c〜(3/2)(正比于)P的经典关系,但这种关系在贯穿过程中会分解。厚度裂纹,并转化为线性关系:c(与P成正比)。临界载荷和临界裂纹长度与厚度的关系表达式通过断裂力学分析获得,并且与当前有限元素模拟。

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