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Fabrication of large-area ordered arrays of nanoparticles on patterned substrates

机译:在图案化基材上制备纳米粒子的大面积有序阵列

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Many potential applications in nanotechnology require virtually defect-free arrays of nanometre-scale particles over large areas. Guided self-assembly of colloidal particles on patterned templates has been shown to produce ordered arrays of colloidal particles. However, there is a need to extend this technique to particles measuring much less than 50 nm in size and to develop robust fabrication techniques that would lead to defect-free, large-area arrays. We have investigated the use of the dip-coating technique to assemble one- and zero-dimensional arrays on patterned templates using particles with diameters in the 15-50 nm range. Substrates with high-resolution groove or hole patterns were prepared with extreme-ultraviolet interference lithography (EUV-IL). Particle arrays with low defect density were achieved by adapting the deposition conditions (particle concentration, pH, dip speed and orientation). The experimental findings are explained with a model that describes the relative influences of the contributing forces in the assembly process. The driving force behind the assembly is found to be the capillary forces that organize the particles with respect to the pattern on the substrate and each other. The process does not seem to impose any inherent limitations on the defect density or the size of the particle arrays.
机译:纳米技术中的许多潜在应用都要求在大面积上几乎无缺陷的纳米级颗粒阵列。胶体颗粒在图案化模板上的引导自组装已显示可产生胶体颗粒的有序阵列。但是,需要将该技术扩展到尺寸远远小于50 nm的颗粒,并开发可靠的制造技术,以产生无缺陷的大面积阵列。我们研究了浸涂技术在直径为15-50 nm范围内的粒子上,在图案化模板上组装一维和零维阵列的用途。使用极紫外干涉光刻(EUV-IL)制备具有高分辨率凹槽或孔图案的基板。通过调整沉积条件(粒子浓度,pH,浸入速度和方向),可以得到具有低缺陷密度的粒子阵列。用一个模型解释了实验结果,该模型描述了装配过程中作用力的相对影响。发现组件背后的驱动力是毛细作用力,其相对于基板上的图案以及彼此组织微粒。该工艺似乎并未对缺陷密度或粒子阵列的大小施加任何固有的限制。

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