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On the influence of environment gases, relative humidity and gas purification on dielectric charging/discharging processes in electrostatically driven MEMS/NEMS devices

机译:受环境气体,相对湿度和气体净化对静电驱动MEMS / NEMS器件中介电充电/放电过程的影响

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In this paper, we investigate the impact of environment gases and relative humidity on dielectric charging phenomenon in electrostatically actuated micro- and nano-electromechanical systems (MEMS and NEMS). The research is based on surface potential measurements using Kelvin probe force microscopy (KPFM). Plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films were investigated in view of applications in electrostatic capacitive RF MEMS switches. Charges were injected through the atomic force microscope (AFM) tip, and the induced surface potential was measured using KPFM. Experiments have been performed in air and in nitrogen environments, both under different relative humidity levels ranging from 0.02% to 40%. The impact of oxygen gas and hydrocarbon contaminants has been studied for the first time by using different gas purifiers in both air and nitrogen lines. Voltage pulses with different bias amplitudes have been applied during the charge injection step under all investigated environmental conditions in order to investigate the effect of bias amplitude. The investigation reveals a deeper understanding of charging and discharging processes and could further lead to improved operating environment conditions in order to minimize the dielectric charging. Finally, the nanoscale KPFM results obtained in this study show a good correlation with the device level measurements for capacitive MEMS switches reported in the literature.
机译:在本文中,我们研究了环境气体和相对湿度对静电驱动的微机电系统和纳米机电系统(MEMS和NEMS)中介电充电现象的影响。该研究基于使用开尔文探针力显微镜(KPFM)进行的表面电势测量。考虑到在静电电容RF MEMS开关中的应用,研究了等离子体增强化学气相沉积(PECVD)氮化硅膜。通过原子力显微镜(AFM)尖端注入电荷,并使用KPFM测量感应的表面电势。已经在空气和氮气环境中(相对湿度范围为0.02%至40%)进行了实验。通过在空气和氮气管线中使用不同的气体净化器,首次研究了氧气和碳氢化合物污染物的影响。为了研究偏置幅度的影响,在所有研究的环境条件下,均已在电荷注入步骤中施加了具有不同偏置幅度的电压脉冲。该调查揭示了对充电和放电过程的更深入了解,并可能进一步改善操作环境条件,以最大程度地减少电介质充电。最后,在这项研究中获得的纳米级KPFM结果显示与文献中报道的电容MEMS开关的器件级测量具有良好的相关性。

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