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Errors in nanometrology by SEM

机译:SEM的纳米计量学错误

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Scanning electron microscopy (SEM) is widely used for the inspection of nanostructures such as nanocrystallites and nanotubes as well as quantum wells and many other sub-micrometre devices. Some published papers show that the apparent size of small details in SEM images appear larger than their real dimension as obtained from transmission electron microscopy, for instance. A possible explanation is deduced here from the use of two simple models for the radial distribution of the emitted secondary electrons to simulate SEM intensity profiles across stripes of increasing widths, D, with respect to the incident probe diameter, d. Supported by a comparison to published data obtained on quantum wells of increasing widths, the results show that the apparent size of small details appears to be larger than their real dimension and the apparent distance between small details may appear less than their real dimension. The same approach permits us to define strategies to minimize the errors when the dimension of details is of the order of or less than the effective resolution of the operated SEM.
机译:扫描电子显微镜(SEM)被广泛用于检查纳米结构,例如纳米微晶和纳米管以及量子阱和许多其他亚微米设备。一些发表的论文表明,例如,从透射电子显微镜获得的SEM图像中,小细节的表观尺寸似乎大于其实际尺寸。在此,可以通过使用两个简单的模型来对发射的二次电子进行径向分布来得出可能的解释,以模拟相对于入射探针直径d宽度增加的条纹D上的SEM强度分布。通过与在宽度增加的量子阱上获得的公开数据进行比较的支持,结果表明,小细节的表观尺寸似乎大于其实际尺寸,小细节之间的表观距离可能小于其真实尺寸。当细部尺寸等于或小于操作的SEM的有效分辨率时,相同的方法允许我们定义策略以最小化误差。

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