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Nonvolatile memory properties of Pt nanoparticle-embedded TiO_2 nanocomposite multilayers via electrostatic layer-by-layer assembly

机译:Pt纳米粒子嵌入的TiO_2纳米复合多层膜通过静电逐层组装的非易失性存储特性

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摘要

It is demonstrated that notable resistive switching memory properties depending on voltage polarity (i.e. bipolar switching properties) can be obtained from the layer-by-layer (LbL) assembled multilayers based on transition metal oxides and metal nanoparticles. Cationic poly(allylamine hydrochloride) and anionic titania precursor layers were deposited alternately onto Pt-coated Si substrates using an electrostatic LbL assembly process. Anionic Pt nanoparticles (Pt_(NP) with about 5.8nm diameter size were also inserted within the multilayers using the same interactions mentioned above. These multilayers were converted to Pt_(NP)-embedded TiO_2 films by thermal annealing and the films were then coated with a top electrode. When external bias was applied to the devices, bipolar switching properties were observed at low operating voltages showing the high ON/OFF ratio (>10~4) and the stable device performance. These phenomena were caused by the presence of Pt_(NP) inserted within TMO films.
机译:已经证明,可以从基于过渡金属氧化物和金属纳米颗粒的逐层(LbL)组装的多层中获得取决于电压极性的显着的电阻开关存储特性。使用静电LbL组装工艺,将阳离子聚(烯丙胺盐酸盐)和阴离子二氧化钛前体层交替沉积到涂有Pt的Si基板上。通过与上述相同的相互作用,将阴离子型Pt纳米粒子(直径约5.8nm的Pt_(NP)插入到多层中,通过热退火将这些多层转化为嵌入Pt_(NP)的TiO_2薄膜,然后将其涂覆当外部偏置施加到器件上时,在低工作电压下观察到双极开关特性,显示出高的开/关比(> 10〜4)和稳定的器件性能,这些现象是由于存在Pt_ (NP)插入TMO电影中。

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