首页> 外文期刊>Nanotechnology >Red light emitting solid state hybrid quantum dot-near-UV GaN LED devices
【24h】

Red light emitting solid state hybrid quantum dot-near-UV GaN LED devices

机译:红光发射固态混合量子点近紫外GaN LED器件

获取原文
获取原文并翻译 | 示例
           

摘要

We produced core-shell (CdSe)ZnSe quantum dots by direct colloidal chemical synthesis and the surface-passivation method-an overcoating of the core CdSe with a larger-bandgap material ZnSe. The (CdSe)ZnSe quantum dots(QDs) play the role of a colour conversion centre. We call these quantum dots nanophosphors. We fabricated red light emitting hybrid devices of (CdSe)ZnSe QDs and a near-UV GaN LED by combining red light emitting (CdSe)ZnSe quantum dots (as a colour conversion centre) with a near-UV(NUV) GaN LED chip (as an excitation source). A few good red phosphors have been known for UV excitation wavelengths, and red phosphors for UV excitation have been sought for a long time. Here we tested the possibility of using (CdSe)ZnSe QDs as red nanophosphors for UV excitation. The fabricated red light emitting hybrid device of (CdSe)ZnSe and a NUV GaN LED chip showed a good luminance. We demonstrated that the (CdSe)ZnSe quantum dots were promising red nanophosphors for NUV excitation and that a red LED made of QDs and a NUV excitation source was a highly efficient hybrid device.
机译:我们通过直接的胶体化学合成和表面钝化方法生产了核-壳(CdSe)ZnSe量子点-用较大的带隙材料ZnSe对CdSe核进行覆盖。 (CdSe)ZnSe量子点(QDs)起到颜色转换中心的作用。我们称这些量子点为纳米磷光体。通过将红色(CdSe)ZnSe量子点(作为颜色转换中心)与近紫外(NUV)GaN LED芯片相结合,我们制造了(CdSe)ZnSe QD和近紫外GaN LED的红色发光混合器件(作为激发源)。已知几种用于紫外线激发波长的良好的红色磷光体,并且长期以来一直在寻求用于紫外线激发的红色磷光体。在这里,我们测试了使用(CdSe)ZnSe QD作为红色纳米磷光体进行UV激发的可能性。所制造的(CdSe)ZnSe红色发光混合器件和NUV GaN LED芯片显示出良好的亮度。我们证明了(CdSe)ZnSe量子点是用于NUV激发的有希望的红色纳米磷光体,并且由QD和NUV激发源制成的红色LED是高效的混合器件。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号