Large area nanorings fabricated using an atomic layer deposition Al2O3 spacer for magnetic random access memory application

摘要

We have designed a novel atomic layer deposition (ALD) Al2O3 spacer mask technique for fabricating large area high density nanoscale magnetic rings by photolithography for magnetic random access memory applications. A simple mask design and a low temperature ALD process were utilized to simplify the process. Dry etching of Al2O3 and cobalt was investigated for optimizing the nanostructure dimension control. A ring array with density and dimensions below the limits for photolithography tools has been achieved. The magnetic behavior of the ring array was characterized using a SQUID ( superconducting quantum interference device). The switching distribution and effects of interaction among ring arrays were studied by correlating simulation with experimental results.