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A large-area mesoporous array of magnetic nanostructure with perpendicular anisotropy integrated on Si wafers

机译:具有垂直各向异性的大面积介孔磁纳米结构阵列集成在Si晶片上

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摘要

Large-area, over several square centimeters, mesoporous array of magnetic nanostructure with perpendicular anisotropy is prepared by depositing Co/Pt multilayers (MLs) on a mesopore array of anodized alumina (AAO) fabricated on Si wafers. The MLs are mainly deposited on the top of AAO walls and perimeters of the pores; very small amounts of magnetic material reach the bottom due to the high aspect ratio of AAO. Consequently, ordered pores are present in the magnetic MLs. The mean pore diameter of the fabricated mesoporous array is 8.83 nm with a standard deviation of 3.16 nm and density of about 2.1 x 10(11) cm(-2). The Co/Pt MLs deposited on AAO and Si both exhibit strong perpendicular magnetic anisotropy, but the perpendicular coercivity (H-c) increases by 15 times on AAO compared to that on Si. On the other hand, the magnetic cluster size decreases from 1000 nm (on Si) to 100 nm due to the presence of high-density pores. The dramatic increase in Hc and the decrease in magnetic cluster size suggest that the pores behave as effective pinning sites. The magnetization-switching characteristics of the fabricated porous structure are different from those of the continuous films or Stoner-Wohlfarth-type (S-W) particles. One of the potential applications of this mesoporous structure may be in the field of high-density magnetic data storage.
机译:通过将Co / Pt多层(MLs)沉积在Si晶片上制造的阳极氧化铝(AAO)的介孔阵列上,可以制备具有垂直各向异性的大面积,几平方厘米的磁纳米结构的介孔阵列。 MLs主要沉积在AAO壁的顶部和孔的周边;由于AAO的高深宽比,极少量的磁性材料到达底部。因此,磁性ML中存在有序的孔。制成的中孔阵列的平均孔径为8.83 nm,标准偏差为3.16 nm,密度约为2.1 x 10(11)cm(-2)。沉积在AAO和Si上的Co / Pt ML均表现出很强的垂直磁各向异性,但是与Si相比,AAO的垂直矫顽力(H-c)增加了15倍。另一方面,由于存在高密度的孔,磁簇尺寸从1000nm(在Si上)减小到100nm。 Hc的急剧增加和磁簇尺寸的减小表明,孔表现为有效的钉扎位点。所制造的多孔结构的磁化切换特性不同于连续膜或斯托纳-沃尔法斯型(S-W)颗粒的磁化切换特性。这种介孔结构的潜在应用之一可能是在高密度磁数据存储领域。

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