Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy

摘要

GaAs nanowires were selectively grown by metal-organic vapour-phase epitaxy within a SiO2 mask window pattern fabricated on a GaAs( 111) B substrate surface. The nanowires were 100-3000 nm in height and 50-300 nm in diameter. The height decreased as the mask window diameter was increased or the growth temperature was increased from 700 to 800 degrees C. The dependence of the nanowire height on the mask window diameter was compared with a calculation, which indicated that the height was inversely proportional to the mask window diameter. This suggests that the migration of growth species on the nanowire side surface plays a major role. Tetrahedral GaAs grew at an early stage of nanowire growth but became hexagonal as the growth process continued. The calculated change in Gibbs free energy for nucleation growth of the crystals indicated that tetrahedra were energetically more favourable than hexagons. Transmission and scanning electron microscopy analyses of a GaAs nanowire showed that many twins developed along the [111] B direction, suggesting that twins had something to do with the evolution of the nanowire shape from tetrahedron to hexagon.