Simulating the effects of surface diffusion on electron beam induced deposition via a three-dimensional Monte Carlo simulation

摘要

The effects that adsorbed precursor surface diffusion has on electron beam induced deposition are explored via a three-dimensional Monte Carlo simulation. Initially the growth rate and resolution are compared for a common set of deposition conditions with a variable surface diffusion coefficient ranging from 0 to 1 x 10(-8) cm(2) s(-1). The growth rate and resolution are shown to both be enhanced as the growth changes from a mass transport limited regime to a reaction rate limited regime. The complex interplay between the vertical growth rate, the lateral growth rate, the interaction volume and the adsorbed and diffused precursor species are discussed. A second scenario is also simulated in which only gas diffused from a constant source at the perimeter of the simulation boundary is assumed (no gas phase adsorption). At low diffusion coefficients, the diffusing gas is consumed by secondary and backscattered electrons and experimentally observed ring-like structures are generated. At higher diffusion coefficients, the diffusion length is sufficient for the precursor atoms to diffuse to the center (and up the pillar sidewalls) to generate nanowires.