Ultrathin Bi films on Si(100)

摘要

In this work we report on the growth of high quality bismuth films with a layer thickness of 3-4 nm on a ( 100)-oriented silicon surface. We present a combined STM and LEED study to determine the best possible growth conditions regarding, for example, film flatness, grain size and low surface roughness. The deposition of bismuth was performed at a low temperature of about 130 K followed by moderate annealing to an ambient temperature or to temperatures slightly above. The result is an epitaxial Bi film with low surface roughness.