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Controlling semiconductor nanoparticle size distributions with tailored ultrashort pulses

机译:使用量身定制的超短脉冲控制半导体纳米粒子的尺寸分布

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摘要

The laser generation of size-controlled semiconductor nanoparticle formation under gas phase conditions is investigated. It is shown that the size distribution can be changed if picosecond pulse sequences of tailored ultra short laser pulses (<200 fs) are employed. By delivering the laser energy in small packages, a temporal energy flux control at the target surface is achieved, which results in the control of the thermodynamic pathway the material takes. The concept is tested with silicon and germanium, both materials with a predictable response to double pulse sequences, which allows deduction of the materials' response to complicated pulse sequences. An automatic, adaptive learning algorithm was employed to demonstrate a future strategy that enables the definition of more complex optimization targets such as particle size on materials less predictable than semiconductors.
机译:研究了在气相条件下形成尺寸受控的半导体纳米粒子的激光。结果表明,如果采用定制的超短激光脉冲(<200 fs)的皮秒脉冲序列,则可以改变尺寸分布。通过以小包装形式传递激光能量,可以在目标表面实现暂时的能量通量控制,从而控制了材料所采用的热力学路径。该概念用硅和锗进行了测试,这两种材料对双脉冲序列的响应都是可预测的,从而可以推断出材料对复杂脉冲序列的响应。一种自动的自适应学习算法被用来演示未来的策略,该策略可以定义更复杂的优化目标,例如比半导体更难预测的材料上的粒径。

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