A growth interruption technique for stacking fault-free nanowire superlattices

摘要

An experimental approach to achieving phase purity in nanowires through molecular beam epitaxy growth is presented. Superlattice heterostructured nanowires were grown, consisting of alternating layers of GaAsP and GaP. The observed core-multishell heterostructure, extending axially and radially, is attributed to simultaneous Au-assisted vertical growth and diffusion-limited radial growth along lateral nanowire facets. Growth interruptions at the GaAsP/GaP interfaces allowed for the elimination of stacking faults and the growth of nanowires with a single-crystalline wurtzite phase.