Negative differential resistance in GaN nanocrystals above room temperature

摘要

Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route.Current–voltage characteristics have been used to investigate this effect through a metal–semiconductor–metal (M–S–M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is 7 V above room temperature.