Fabrication of single-crystal ZnO film by Zn ion implantation and subsequent annealing

摘要

Zn ions were implanted at 160 keV into silica at a dose of 2 x 10(17) ions cm(-2). Cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy studies show that a film of ZnO nanoclusters was formed after the implanted sample was annealed at 700 degrees C in air. With the increase in annealing temperature to 750 degrees C, a single-crystal ZnO film was fabricated. The mechanisms for the formation of single- crystal ZnO films are discussed. The optical absorption and PL spectra of ZnO films are also studied.