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Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase

机译:InN纳米结构中时效过程的相图:氧的掺入和锌共混物相的作用

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Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by transmission electron microscopy (TEM)-related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w nucleus which still remains from the original single-crystalline quantum dots. The good reticular relationships between the different crystals generate low misfit strains and explain the apparent easiness for phase transformations at room temperature and pressure conditions, but also disable the classical methods to identify phases and grains from TEM images. The application of the geometrical phase algorithm in order to form numerical moiré mappings and RGB multilayered image reconstructions allows us to discern among the different phases and grains formed inside these nanostructures. Samples aged for shorter times reveal the presence of metastable InN:O zinc blende (zb) volumes, which act as the intermediate phase between the initial InN-w and the most stable cubic In_2O_3 end phase. These cubic phases are highly twinned with a proportion of 50:50 between both orientations. We suggest that the existence of the intermediate InN:O-zb phase should be seriously considered to understand the reason for the widely scattered reported fundamental properties of thought to be InN-w, as its bandgap or superconductivity.
机译:未封端的InN纳米结构会在环境条件下通过掺入氧而经历有害的自然老化过程。通过透射电子显微镜(TEM)相关技术绘制了此过程涉及的相及其定位。母体纤锌矿InN(InN-w)相从表面消失,并逐渐形成高度织构的立方层,该层完全包裹了仍然保留在原始单晶量子点中的InN-w核。不同晶体之间的良好网状关系产生了低失配应变,并解释了在室温和压力条件下进行相变的明显容易性,但也使经典方法无法从TEM图像识别相和晶粒。几何相位算法的应用,以便形成数值莫尔条纹和RGB多层图像重建,使我们能够辨别在这些纳米结构内部形成的不同相和晶粒。老化时间较短的样品显示存在亚稳态InN:O锌混合物(zb),该体积充当初始InN-w和最稳定的立方In_2O_3结束相之间的中间相。这些立方相高度孪生,两个方向之间的比例为50:50。我们建议应认真考虑InN:O-zb中间相的存在,以了解据称InN-w被广泛散布为带隙或超导性的基本特性的原因。

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