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Topical review nanoscale memory devices

机译:专题回顾纳米级存储设备

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This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO_2.
机译:本文回顾了内存技术中使用纳米材料和设备的现状和未来前景。首先,讨论了闪存的状态和持续的扩展趋势。然后,提供了有关试图在短期内替代闪存的技术的详细讨论。这包括相变随机存取存储器,Fe随机存取存储器和磁性随机存取存储器。存储设备的长期纳米技术前景包括基于碳纳米管的存储,分子电子学和基于电阻材料(例如TiO_2)的忆阻器。

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